单轴、双轴应变Si拉曼谱应力模型  

Stress models relevant to Raman spectrum in uniaxial/biaxial strained Si

作　　者：王程[1] 王冠宇[1] 张鹤鸣[1] 宋建军[1] 杨晨东[1] 毛逸飞 李永茂[1] 胡辉勇[1] 宣荣喜[1] 

机构地区：[1]西安电子科技大学微电子学院宽禁带半导体材料与器件重点实验室,西安710071

出　　处：《物理学报》2012年第4期407-413,共7页Acta Physica Sinica

基　　金：国家部委资助项目(批准号:51308040203;6139801);中央高校基本科研业务费(批准号:72105499;72104089);陕西省自然科学基础研究计划项目(批准号:2010JQ8008)资助的课题~~

摘　　要：本文依据拉曼光谱原理,基于Secular方程及拉曼选择定则分别获得了单轴、双轴(001),(101),(111)应变Si材料应变张量与拉曼谱线移动的定量关系,并在此基础上,基于广义胡克定律最终建立了单轴、双轴(001),(101),(111)应变Si材料拉曼谱峰与应力的理论关系模型.该模型建立过程详细、系统,所得结果全面、量化,可为应变Si材料应力的测试分析提供重要理论参考.Performance enhancement of strained Si material originates from the stress on it,which can be measured by Raman spectroscopy. A study of the theoretical model of strain-induced Raman spectrum frequency shift in strained Si material is of profound theoretical and practical significance.The Raman frequency shift of strained Si is significantly correlated with the stress intensity,the stress type and the crystal plane.However,the corresponding reports republished are lacking in integrality and systematization in the process of modeling.In this paper,according to the theory of Raman spectroscopy,based on Secular equation and Raman selection rules, quantitative relationships between strain tensor and Raman frequency shift for uniaxial and biaxial strained Si grown on（001）,（101）, and（111） SiGe substrates are achieved.On this basis,theoretical models of mechanical stress and Raman spectrum for uniaxial and biaxial strained Si materials grown on（001）,（101）,and（111） SiGe substrates are obtained using Hooke＇s law,respectively.The procedure for setling up these models is elaborate and systematic and the results obtained are comprehensive and quantificational, which can provide an important reference for the stress analysis in strained Si material.

关 键 词：应变SI 拉曼 应力 

分 类 号：TN304.12[电子电信—物理电子学]