(Si/Ge)_n多层薄膜的设计制备及光吸收性能  

Design Preparation and Optical Absorbance of (Si/Ge)_n Multi-Layer Film

作　　者：何明霞[1] 刘劲松[1] 李子全[1] 曹安[1] 刘建宁[1] 丛孟启[1] 蒋维娜[1] 彭洁[1] 余乐[1] 

机构地区：[1]南京航空航天大学材料科学与技术学院

出　　处：《电子器件》2012年第1期1-6,共6页Chinese Journal of Electron Devices

基　　金：江苏省自然科学基金项目(BK2009379);国家大学生创新性实验计划(20101028727);南京航空航天大学基本科研业务费专项科研项目(1006-56Y1064);南京航空航天大学引进人才基金(1006-909308)

摘　　要：采用射频磁控溅射技术,在石英玻璃衬底上沉积了具有不同层数和厚度的(Si/Ge)n多层薄膜。XRD、Raman光谱测试表明,溅射态薄膜为微晶结构,在溅射过程中层间扩散形成Si-Ge振动键,溅射时间和薄膜层数影响着薄膜层间的扩散和结晶率;FESEM结果表明,薄膜表面由颗粒团簇构成,层与层之间有明显界面。UV-vis光谱测试表明,(Si/Ge)n多层薄膜在可见光范围内具有较宽的吸收,增加薄膜层数可扩大太阳能光谱的响应范围,而增加Si单层膜厚度对光吸收范围的影响较小。（Si/Ge）n thin films with different layers and thickness have been＇ successfully deposited by radio frequency magnetron sputtering method. X-ray diffraction and Raman spectra results showed that（Si/Ge） n films in sputtering state were microcrystalline structure, and the diffusion layers （Si- Ge ）were formed in sputtering process. The mutual diffusion and crystallization depended on sputtering time. The FESEM indicated that the films were composed of particle-like cluster, and the interface between the layers was distinct. The UV-vis spectra suggested that the films had wide absorption range in visible range, and the range was enlarged with the increasing of the layer. The increase of Si single-layer film thickness seemed to have little influence on the scope of solar spectrum response.

关 键 词：(Si/Ge)n多层薄膜 射频磁控溅射 层数 厚度 UV-VIS光谱 

分 类 号：O484.1[理学—固体物理] TB34[理学—物理]