A novel superjunction MOSFET with improved ruggedness under unclamped inductive switching  

作　　者：任敏 李泽宏 邓光敏 张灵霞 张蒙 刘小龙 谢加雄 张波 

机构地区：[1]State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China

出　　处：《Chinese Physics B》2012年第4期612-618,共7页中国物理B（英文版）

基　　金：supported by the National Key Scientific and Technological Project (Grant No. 2011ZX02503-005);the Fundamental Research Funds for the Central Universities, China (Grant No. ZYGX2010J038);the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20110185120005)

摘　　要：The ruggedness of a superjunction metal-oxide semiconductor field-effect transistor （MOSFET） under unclamped inductive switching conditions is improved by optimizing the avalanche current path. Inserting a P-island with relatively high doping concentration into the P-column, the avalanche breakdown point is localized. In addition, a trench type P＋ contact is designed to shorten the current path. As a consequence, the avalanche current path is located away from the N＋ source/P-body junction and the activation of the parasitic transistor can be effectively avoided. To verify the proposed structural mechanism, a two-dimensional （2D） numerical simulation is performed to describe its static and on-state avalanche behaviours, and a method of mixed-mode device and circuit simulation is used to predict its performances under realistic unclanlped inductive switching. Simulation shows that the proposed structure can endure a remarkably higher avalanche energy compared with a conventional superjunction MOSFET.The ruggedness of a superjunction metal-oxide semiconductor field-effect transistor （MOSFET） under unclamped inductive switching conditions is improved by optimizing the avalanche current path. Inserting a P-island with relatively high doping concentration into the P-column, the avalanche breakdown point is localized. In addition, a trench type P＋ contact is designed to shorten the current path. As a consequence, the avalanche current path is located away from the N＋ source/P-body junction and the activation of the parasitic transistor can be effectively avoided. To verify the proposed structural mechanism, a two-dimensional （2D） numerical simulation is performed to describe its static and on-state avalanche behaviours, and a method of mixed-mode device and circuit simulation is used to predict its performances under realistic unclanlped inductive switching. Simulation shows that the proposed structure can endure a remarkably higher avalanche energy compared with a conventional superjunction MOSFET.

关 键 词：avalanche current path unclamped inductive switching SUPERJUNCTION MOSFET 

分 类 号：TN386.1[电子电信—物理电子学] TD633[矿业工程—矿山机电]