部分重叠双栅MOSFET特性的研究  

Research on characteristics of the overlap double gate MOSFET

作　　者：韩名君[1] 赵阳[1] 柯导明[1] 

机构地区：[1]安徽大学电子信息工程学院,安徽合肥230601

出　　处：《安徽大学学报（自然科学版）》2012年第2期43-47,共5页Journal of Anhui University(Natural Science Edition)

基　　金：国家自然科学基金资助项目(61076086);安徽省科技计划基金资助项目(2008307);安徽省自然科学基金资助项目(KJ2010B472);东南大学MEMS重点实验室开放基金资助项目

摘　　要：研究一种具有部分重叠双栅结构MOSFET器件模型,并将其与类似的分裂双栅结构MOSFET及普通栅结构MOSFET器件进行比较,利用MEDICI软件对该结构进行仿真.通过仿真可知:部分重叠双栅MOSFET器件通过沟道电场的调节,可降低短沟效应和等效栅电容、提高击穿电压,跨导可由栅压调节,阈值电压随沟道缩短而下降的变化率在文中讨论的3种结构中最小.An overlap gate structure MOSFET model was researched and compared with split double gate structure MOSFET and common gate structure MOSFET in this paper. This structure was proved by MEDICI software. The simulation results showed that the channel surface electric field of the overlap double gate structure was modulated. The short ditch effect and equivalent gate capacitance were reduced, meanwhile, breakdown voltage was increased. Transconductanee could be regulated by gate voltage. Along with the channel shorten, threshold voltage changed. The droop rate of overlap double gate was the smallest of the three structures discussed in this paper.

关 键 词：部分重叠双栅 分裂双栅 短沟效应 栅电容 沟道表面电场 

分 类 号：TN386.1[电子电信—物理电子学]