金属薄片上无定形硅(SOM)的激光再结晶研究  

A study of laser recrystallization of SOM (Silicon On Metal) material

作　　者：林成鲁[1] 邢昆山 陈莉芝[1] 许学敏[1] 谭松生 邹世昌[1] 

机构地区：[1]中国科学院上海冶金所离子束开放实验室,200050

出　　处：《中国激光》1990年第7期416-419,411,共5页Chinese Journal of Lasers

摘　　要：以CW Ar^+激光对非晶硅再结晶得到了SOM(Silicon on Metal)多晶硅新材料。其晶粒大小为10×40μm^2,杂质分布均匀,电学性能大大改善.用这种SOM材料已制备成功在1bar压力范围内灵敏度为6mV/V的性能良好的压力传感器。CW Ar+ laser irradiation was used to recrystallize a-Si film, and the grain was increased to more than 10×40μm2, the concentration profile of impurities became uniform and the electrical properties of SOM were improved significantly. The pressure transducer made of this material has a pressure sensitivity of 6 mV/V at the pressure range of 1 bar.

关 键 词：激光 非晶硅 再结晶 SOM 

分 类 号：TN241[电子电信—物理电子学]