Au/SiO_2纳米复合薄膜的结构表征及光致发光特性  

Characterization and Photoluminescence of Au/SiO_2 Nanocomposite Films

作　　者：李玉国[1] 郑学垒[1] 彭瑞芹[1] 翟冠楠[1] 张晓森[1] 

机构地区：[1]山东师范大学物理与电子科学学院半导体研究所,济南250014

出　　处：《半导体光电》2012年第1期45-48,共4页Semiconductor Optoelectronics

摘　　要：采用磁控溅射和退火技术制备出Au/SiO2纳米复合薄膜。利用扫描电子显微镜(SEM),X射线衍射(XRD)和原子力显微镜(AFM)对上述纳米复合薄膜进行了结构表征。实验结果表明,纳米复合薄膜的表面上均匀分布着直径在100～300nm的金纳米颗粒。金纳米颗粒的大小随着退火时间的增加而增大。用荧光光谱仪(PL)对薄膜的光致发光特性进行了研究。结果表明,在激发波长为325nm时,分别在525nm和560nm处出现两个发光峰;在激发波长为250nm时,在325nm处出现发光峰,这一发光峰可能与非晶SiO2的结构缺陷有关。Au/SiO2 nanocomposite films were prepared by radio frequency sputtering technique and annealing.The structure of the films were characterized by scanning electron microscopy（SEM）,X-ray diffraction（XRD）,and atomic force microscopy（AFM）.The surface of the nanocomposite films was uniform with Au particles with the size of 100 to 300 nm.The size of Au crystallites increases with the increasing annealing time.The luminescent behavior of the nanocomposite films was characterized by photoluminescence（PL） with different excitation wavelengthes.Two emission peaks at around 525 nm and 560 nm were observed with the excitation wavelength at 325 nm.An intensively emission peak at around 325 nm was observed with the excitation wavelength at 250 nm,which is related to the defective structure of the amorphous SiO2 layer.

关 键 词：Au/SiO2 纳米复合薄膜 磁控溅射 光致发光 

分 类 号：O484.41[理学—固体物理]