非等温耦合模型下大功率LED特性的研究  

The Investigation of High Power LED by a Non-Isothermal Coupling Model

作　　者：王天虎[1,2] 王晓东[1,3] 徐进良[1,3] 

机构地区：[1]华北电力大学新能源电力系统国家重点实验室,北京102206 [2]能源的安全与清洁利用北京市重点实验室,北京102206 [3]低品位能源多相流与传热北京市重点实验室,北京102206

出　　处：《工程热物理学报》2012年第4期647-650,共4页Journal of Engineering Thermophysics

基　　金：国家自然科学基金-广东省联合基金重点项目(No.U1034004);中央高校基本科研业务费专项资金资助(No.11ZG01)

摘　　要：本文建立了发光二极管(LED)芯片的非等温多物理场耦合模型。结果表明,芯片内热源集中在多量子阱(MQWs)区域,且靠近p-GaN的第一个量子阱(QW)内的内热源强度最高;焦耳热和非辐射复合热贡献大,而汤姆逊热和帕尔帖热贡献小,可忽略。等温模型与非等温模型的对比表明,在大电流或低冷却能力条件下,芯片内部与芯片衬底温差显著,等温模型无法准确预测芯片性能,需采用非等温模型。A non-isothermal multi-physics coupling model for light-emitting diode has been established. The results show that the heat source is concentrated within the multiple quantum well（MQWs） region,and exhibits the highest intensity in the quantum well（QW） nearly to the p-GaN layer;Joule heat and non-radiative recombination heat contribute to most of the heat source, but Thomson heat and Peltier heat contribution are so small thus can be ignored.Besides,the comparison between isothermal and non-isothermal models shows that under high current or low cooling capacity conditions,the temperature difference between epilayer and substrate is very large, under this circumstance,the isothermal model can not accurately predicts the chip performance,it indeed requires the non-isothermal model.

关 键 词：发光二极管 多量子阱 内量子效率 

分 类 号：TK123[动力工程及工程热物理—工程热物理]