用于MFIS的铁电薄膜刻蚀技术研究  

A Study on the Reactive Ion Etching of SBT and ZrO 2 Thin Films for MFIS

作　　者：颜雷[1,2] 黄维宁[1,2] 姜国宝[1,2] 汤庭鳌[1,2] 程旭[1,2] 钟琪[1,2] 姚海平[1,2] 汤祥云[1,2] 

机构地区：[1]复旦大学电子工程系 [2]复旦大学ASIC和系统国家重点实验室,上海200433

出　　处：《微电子学》2000年第1期8-10,共3页Microelectronics

基　　金：国家自然科学基金! ( 698760 0 8);AM基金;"863"资助项目

摘　　要：制备MFIS存储器的铁电薄膜一般选用抗疲劳特性好的SBT铁电薄膜,介质层一般选用ZrO2作为阻挡层,以克服电荷注入效应,改进器件的性能。在MFIS的研制中,SBT薄膜和ZrO2薄膜的刻蚀是关键工艺之一。研究了用SF6和Ar作为反应气体刻蚀SBT及ZrO2薄膜的方法,对不同条件下SBT和ZrO2的刻蚀速率进行了实验研究和讨论、分析,得到了刻蚀SBT及ZrO2的优化工艺条件。In order to improve the performance of the metal ferroelectric insulator semiconductor(MFIS)device, SBT ferroelectric films with good anti fatigue property is used, and ZrO 2 film is employed as the buffer layer to overcome the charge injection effect. The method of reactive ion etching of SBT and ZrO 2 by using SF 6 and Ar as reactive gas is investigated in the paper. The relationship between etching rates and etching conditions is examined through experiment. Optimal process conditions for SBT and ZrO 2 etching have been obtained.

关 键 词：铁电存储器 反应离子刻蚀 铁电薄膜 

分 类 号：TN405.983[电子电信—微电子学与固体电子学]