锗抛光片干燥技术研究  

Research of Dry Technology of Germanium Polished Wafers

作　　者：戚红英[1] 王云彪[1] 

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《电子工艺技术》2012年第2期114-117,共4页Electronics Process Technology

摘　　要：在锗加工工艺中,干燥技术对于加工的成品率和抛光片表面质量有着重要的影响。介绍了异丙醇脱水干燥技术的原理,分析了异丙醇脱水技术对超薄锗抛光片的适用性。采用湿法清洗技术,有效去除了表面沾污和抛光后的表面氧化产物,控制了抛光片表面GeO_2的生成。采用异丙醇脱水技术成功实现了140μm厚锗抛光片的干燥。The drying technology has very important influence to the surface quality of the polished wafers in the processing technology of germanium. Introduce the theory of the isopropyl alcohol （IPA） drying technology, analyze the applicability of IPA drying technology on the ultra thin germanium polished wafers. The surface oxidation and quality are effectively controlled by using the IPA dry technology. IPA dry technology is applicable to dry the ultra thin germanium polished wafers, controlling generation of the polishing surface Ge02. Drying 140 μm germanium polished wafers are achieved by using IPA dry technoloav.

关 键 词：异丙醇脱水 湿法清洗 表面沾污 

分 类 号：TN305[电子电信—物理电子学]