基于辐照前1/f噪声的金属-氧化物-半导体场效应晶体管潜在缺陷退化模型  

A latent defect degradation model of metal-oxide-semiconductor field effect transistor based on pre-irradiation 1/f noise

作　　者：孙鹏[1] 杜磊[1] 陈文豪[1] 何亮[1] 

机构地区：[1]西安电子科技大学技术物理学院,西安710071

出　　处：《物理学报》2012年第6期446-452,共7页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:60276028)资助的课题~~

摘　　要：基于金属-氧化物-半导体-场效应管(MOSFET)辐射损伤的微观机理,推导出了MOSFET经历辐照之后氧化层空穴俘获与阈值电压漂移之间关系的表达式.又根据MOSFET中1/f噪声产生的微观机理,建立了辐照之前MOSFET的1/f噪声功率谱幅值与阈值电压漂移量之间的定量关系,并通过实验予以验证.结果表明,辐照之前的1/f噪声功率谱幅值与辐照之后的阈值电压漂移量存在正比例关系,阈值电压漂移量可以反映出MOSFET内部的潜在缺陷的退化程度,因此,该模型有助于利用1/f噪声参量来表征MOSFET内部潜在缺陷的数量和严重程度.Based on metal-oxide-semiconductor field effect transistor（MOSFET） microscopic mechanism of radiation damage,a relation between radiation induced increase in number of oxide hole-traps and post-irradiation threshold voltage drift is proposed.Then,Based on MOSFET microscopic mechanism of 1/f noise generation,a quantitative relationship between pre-irradiation 1/f noise power spectral amplitude and post-irradiation threshold voltage drift is founded,which accords well with the experimental results.This relationship shows that pre-irradiation 1/f noise power spectral amplitude is proportional to post-irradiation threshold voltage drift, which can reflect the degradation of latent defect in MOSFET.So,this modal is helpful to characterize the quantity and severity of latent defect in MOSFET by using 1/f noise parameters.

关 键 词：1/f噪声 潜在缺陷 界面陷阱 氧化层陷阱 

分 类 号：TN386[电子电信—物理电子学]