RSD二维数值模拟与预充过程分析  

Two-Dimensional Numerical Simulation of RSD and Analysis of Pre-Charge Process

作　　者：余岳辉[1] 冯仁伟[1] 梁琳[1] 

机构地区：[1]华中科技大学电子科学与技术系,武汉430074

出　　处：《电工技术学报》2012年第3期147-152,共6页Transactions of China Electrotechnical Society

基　　金：国家自然科学基金项目(50907025)

摘　　要：为了加深对反向开关晶体管(RSD)器件原理的认识,本文基于半导体物理基本方程,在二维元胞单元上利用有限差分的方法建立了RSD器件的数值模型。模型考虑了载流子间散射、SRH和俄歇复合、碰撞电离等物理效应。采用实验电路提取的参数建立了RSD谐振预充触发电路的外电路模型。联合器件模型方程组和谐振触发外电路模型方程,利用Matlab语言采用Runge-Kutta和牛顿迭代的方法求解并获得了器件瞬态载流子分布和电压电流波形。本文在对比实验结果的基础上,解释并说明了模型的有效性和误差的产生原因。基于载流子和电流分布变化数据,详细分析了RSD预充过程。发现了预充过程中存在的强烈俄歇复合现象和电流抽取现象将导致预充电流注入的等离子体大量减少,因此不宜直接采用电流时间积分值计算预充电荷总量。Based on the full set of semiconductor device equations,a 2-dimension numerical model of RSD（reversely switched dynistor） is set up in a cell structure with finite difference method to obtain a better understanding of RSD.Included in the model are the physical mechanisms such as carrier-carrier scattering,SRH and Auger recombination,impact ionization and so on.Besides,Circuit model triggered by resonant method is built upon the parameters extracted from experiment conditions.Together with the circuit model,the devices model is calculated by program written in Matlab with Runge-Kutta and Newton iterative method to obtain the distribution of carries and the waveform of current and voltage.Based on the comparison between the result of calculation and experiment,validity of the model is analyzed and explanation of error is given.The pre-charge process is also analyzed with the help of concentrations of carriers and current density derived from the simulation.Significant Auger recombination and withdraw current during the pre-charge process diminish the quantity of plasma injected by the pre-charge current,which demonstrate that the current integral during the pre-charge process can not represent the whole quantity of pre-charge.

关 键 词：反向开关晶体管 数值模拟 载流子分布 预充过程 

分 类 号：TN389[电子电信—物理电子学]