长直SiO2纳米线的制备和结构表征  

Preparation and Structure Characterization of Long Straight SiO_2 Nanowires

作　　者：郑学垒[1] 李玉国[1] 彭瑞琴[1] 翟冠楠[1] 张晓森[1] 

机构地区：[1]山东师范大学物理与电子科学学院半导体研究所,济南250014

出　　处：《微纳电子技术》2012年第4期237-241,共5页Micronanoelectronic Technology

摘　　要：采用磁控溅射法,以Si粉和溅金Si(111)为原料,加入C粉,在Si(111)衬底上制备无定形SiO2纳米线。首先,在Si(111)衬底上分别溅射厚度为18和36 nm的Au。然后,在1 100℃条件下处理80 min。用扫描电子显微镜(SEM)、X射线光电子能谱(XPS)、傅里叶红外光谱(FTIR)和X射线衍射方法 (XRD)等测试手段对退火后的SiO2纳米线的表面相貌、微观结构进行分析。结果表明,反应后有大量长而直的SiO2纳米线生成。而且随着溅射Au厚度的增加,SiO2纳米线的数量增多,且长度更长。这表明,SiO2纳米线的生长与溅射Au的厚度密切相关。Amorphous SiO2 nanowires were prepared by heating Si powder and Au-coated Si（111） substrates with the carbon powder as the active catalyst.Firstly,the Au films with different thicknesses of 18 and 36 nm were sputtered on Si（111） substrates,respectively.Then,the pro-ducts were processed at 1 100 ℃ for 80 min.The morphology and microstructure of SiO2 nanowires after annealing were analyzed by the scanning electron microscopy（SEM）,X-ray photoelectron spectroscopy（XPS）,Fourier transform infrared spectroscopy（FTIR） and X-ray diffraction（XRD）.The results show that a large quantity of long and straight SiO2 nanowires are formed.More SiO2 nanowires were formed with the thickness of sputtered Au film increased,and the nanowires were much longer.The discussion above indicates that the growth of the long and straight SiO2 nanowires has a close relationship to the thickness of the sputtering Au.

关 键 词：二氧化硅(SiO2) 纳米线 无定形 磁控溅射 微观结构 

分 类 号：TB383[一般工业技术—材料科学与工程]