MOCVD生长源流量对p型GaN薄膜特性影响的研究  

Investigation of effects of source flux on the properties of p-GaN flim grown by MOCVD

作　　者：韩军[1] 冯雷[1] 邢艳辉[1] 邓军[1] 徐晨[1] 沈光地[1] 

机构地区：[1]北京工业大学电子信息与控制工程学院,北京100124

出　　处：《光电子．激光》2012年第4期708-711,共4页Journal of Optoelectronics·Laser

基　　金：国家高技术研究发展"863"计划(2008AA03Z402);国家自然科学基金(61107025);北京市自然科学基金(4102003;4112006;4092007)资助项目

摘　　要：利用金属有机物化学气相淀积(MOCVD)技术在蓝宝石衬底上生长p型GaN:Mg薄膜,对不同二茂镁(CP2Mg)流量和Ⅴ族和Ⅲ族摩尔(Ⅴ/Ⅲ)比生长的p型GaN:Mg薄膜特性进行研究。研究表明,增加Ⅴ/Ⅲ比,可以降低螺旋位错密度,提高p型GaN晶体质量。当Ⅴ/Ⅲ比为3 800时,Cp2Mg流量最高为170sccm,获得p型GaN(002)面峰值半高宽(FWHM)最窄为232"。同时研究发现,单纯提高Ⅴ/Ⅲ比对降低刃型位错影响较不明显。GaN：Mg films have been grown on sapphire at low temperature by metal-organic chemical vapor deposition（MOCVD）,and the properties of p-GaN：Mg films with different CP2Mg source fluxes and mol ratios of Ⅴ and Ⅲ（Ⅴ/Ⅲ） are studied.The results show that the screw dislocation density is decreased under increasing Ⅴ/Ⅲ ratio,and the quality of p-GaN crystal is improved.And when the Ⅴ/Ⅲ ratio is 3 800,the CP2Mg flux is up to 170 sccm,and the p-GaN film,whose narrower full width at half maximum（FWHM） of（002） plane is 232＂,is obtained.It also shows that the effects on decreasing edge dislocation only by increasing Ⅴ/Ⅲ ratio are not obvious.

关 键 词：金属有机物气相淀积(MOCVD) p型氮化镓(CaN) X射线双晶衍射(DCXRD) 原子力显微镜(AFM) 

分 类 号：O484[理学—固体物理]