溅射压强对柔性PET衬底ZnO薄膜性能的影响  

Effect of sputtering pressure on structure and optoelectrical properties of TZO films deposited on flexible PET substrate by DC magnetron sputtering at room temperature

作　　者：刘汉法[1] 类成新[1] 张化福[1] 

机构地区：[1]山东理工大学理学院,山东淄博255049

出　　处：《光电子．激光》2012年第4期730-734,共5页Journal of Optoelectronics·Laser

基　　金：山东省自然科学基金(ZR2009GL015)资助项目

摘　　要：利用直流磁控溅射法,在室温水冷柔性PET衬底上成功制备出了掺钛氧化锌(ZnO:Ti,TZO)透明导电薄膜。通过X射线衍射(XRD)研究了薄膜的结构,用扫描电镜(SEM)研究了薄膜的表面形貌,用四探针和紫外-可见分光光度计等仪器对薄膜的特性进行测试分析,研究了溅射压强对ZnO:Ti薄膜表面结构、形貌、力学、电学和光学性能的影响。结果表明,溅射压强对PET衬底上的TZO薄膜的性能有显著的影响,实验制备的ZnO:Ti薄膜为具有C轴择优取向的六角纤锌矿结构的多晶薄膜;当溅射压强从2Pa增加到4Pa时,薄膜的电阻率由10.87×10-4Ω.cm快速减小到4.72×10-4Ω.cm,随着溅射压强由4Pa继续增大到6Pa,薄膜的电阻率变化平缓,溅射压强为5Pa时薄膜的电阻率最小,为4.21×10-4Ω.cm;经计算得到6Pa时样品薄膜应力最小,为0.785 839GPa;所有样品都具有高于91%的可见光区平均透过率。Transparent conducting Ti-doped zinc oxide films（ZnO：Ti,TZO）with high transparency and relatively low resistivity have been successfully prepared on flexible PET substrate by DC magnetron sputtering at room temperature.Structural,morphological,stress,optical and electrical properties of ZnO：Ti films are investigated.Experimental results show that all the deposited films are polycrystalline with a hexagonal structure and a preferred orientation perpendicular to the substrates along the c-axis.Sputtering pressure plays an important role on the electrical resistivity of flexible ZnO：Ti films.When sputtering pressure increases from 2 Pa to 6 Pa,the resistivity of the deposited films initially decreases and then slightly increases.At the optimum sputtering pressure of 5 Pa,the lowest resistivity of 4.21×10-4 Ω·cm is obtained.All the films present a high transmittance over 91% in the visible range.

关 键 词：TZO薄膜 透明导电薄膜 应力 溅射压强 

分 类 号：O484.1[理学—固体物理]