锗硅HBT BiCMOS工艺中的p-i-n开关二极管设计  

p-i-n Switch Diode Design in SiGe HBT BiCMOS Process

作　　者：刘冬华 胡君 钱文生 陈帆 陈雄斌 段文婷 

机构地区：[1]上海华虹NEC电子有限公司,上海201206

出　　处：《半导体技术》2012年第4期271-275,共5页Semiconductor Technology

基　　金：国家科技02重大专项资助项目(2009ZX02303)

摘　　要：介绍了一种集成在BiCMOS工艺的p-i-n开关二极管的器件。它由在STI下面的n型赝埋层作为p-i-n的n区,锗硅npn异质结双极型晶体管的重掺杂外基区作为p-i-n的p区。同时新开发了穿过场氧的深接触孔工艺用于赝埋层的直接引出,并采用p-i-n注入用于对i区进行轻掺杂。借助半导体工艺与器件仿真软件,得到了有源区尺寸、赝埋层到有源区的距离、p-i-n注入条件等关键工艺参数对p-i-n性能的影响。最后优化设计的p-i-n二极管,其在2.4 GHz频率下的指标参数,如插入损耗为-0.56 dB,隔离度为-22.26 dB,击穿电压大于15 V,它达到了WiFi电路中的开关器件的性能要求。The p-i-n switch diode was introduced, which was integrated into SiGe HBT BiCMOS process. An n-type pseudo buried layer （PBL） under STI was adopted as n region, and the heavily doped extrinsic base of SiGe npn HBT was used as p region. A deep contact through field oxide was developed to pick up the pseudo buried layer. An extra implant （ p-i-n implant） was induced into i region. With the aid of process and device simulation tools, the key parameters were obtained for p-i-n performance optimization such as the size of active area, space from PBL to active area, energy and dose of p-i-n implant. The demonstrated performance of this optimized design p-i-n diode exhibits an insertion loss as -0.56 dB and an isolation loss as -22.26 dB, and the BV can achieve above 15 V at the frequency of 2.4 GHz, which meets the requirement of p-i-n diode aoolied as switch in WiFi.

关 键 词：P-I-N二极管 锗硅异质结双极型晶体管 双极互补金属氧化物半导体 赝埋层 工艺和器件仿真 

分 类 号：TN305[电子电信—物理电子学]