4H-SiC MESFET工艺中的高温氧化及介质淀积技术  

High Temperature Oxidation and Dielectric Deposition Technologies in 4H-SiC MESFET Process

作　　者：付兴昌[1] 潘宏菽[2] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051 [2]专用集成电路重点实验室,石家庄050051

出　　处：《半导体技术》2012年第4期280-283,共4页Semiconductor Technology

摘　　要：采用自主开发的4H-SiC高温氧化技术,并结合低压化学气相淀积方法,在器件表面形成较为致密的氧化层,降低了器件的反向泄漏电流,提高了器件的击穿电压,同时也提高了器件的输出功率及功率增益,为器件长期稳定可靠工作奠定了工艺基础。采用此技术后,单胞20 mm左右栅宽器件在2 GHz脉冲条件下(脉冲宽度300μs,占空比10%)输出功率达78 W,比原工艺的器件输出功率提高了20 W以上,功率增益提高了1.5 dB,达到8.9 dB左右,功率附加效率也从23%提升到32%,初步显示了该工艺技术在制备4H-SiC微波功率器件中的优势。The tight SiO2 film on the surface of 4H-SiC was formed by self-developed 4H-SiC high temperature oxidation and low pressure chemical vapor deposition （LPCVD） process. The leakage current of the devices between the drain with the gate was reduced. The breakdown voltage and output power as well as the power gain of the devices were increased. The reliability and stability of the devices could be improved. The output power of the device with the single cell about 20 mm gate width is about 78 W that increased above 20 W than that of the primordial processing device, the power gain is about 8.9 dB that increased more than 1.5 dB at 2 GHz under pulsed condition （PW = 300 us, DF = 10% ） , the power added efficiency （PAE） increased from 23% over 32%. The processes developed for 4H-SiC microwave power devices have the advantages over traditional methods.

关 键 词：碳化硅 微波功率器件 氧化 低压化学气相淀积 S波段 

分 类 号：TN304.055[电子电信—物理电子学]