S波段硅微波功率晶体管的加速寿命试验  

Accelerate Lifetime Test for S-Band Si Microwave Power Transistor

作　　者：童亮[1] 彭浩[1] 高金环[1] 黄杰[1] 

机构地区：[1]国家半导体器件质量监督检验中心,石家庄050051

出　　处：《半导体技术》2012年第4期321-325,共5页Semiconductor Technology

摘　　要：为了在尽量短的时间内对S波段硅微波功率晶体管的长期可靠性进行研究,依据温度应力阿列尼乌斯(Arrhenius)模型,进行了两种S波段硅微波功率晶体管的可靠性寿命评价试验。试验采用步进应力加速寿命试验摸底,找出了最高试验应力水平,并根据摸底结果分别进行了3组恒定应力加速寿命试验,最高试验壳温分别为250℃和220℃,大幅度提高了温度应力,加快了试验速度。试验全程采用数据采集卡实施实时监测,并对失效样品进行了失效分析,最大程度地保证了试验数据的准确性。通过对试验结果的统计分析,推算出了两种S波段硅微波功率晶体管的平均寿命。The reliability lifetime evaluation tests base on temperature stress Arrhenius model for two kinds of silicon microwave power transistors were performed to study the long-term reliability in the minimum time possibly. The tests adopted step-stress accelerate lifetime test to find out the real intention, the maximum test stress levels were found and then three groups of constant-stress tests were performed each. The highest temperatures of case in tests are 250 ℃ and 220 ℃. The temperature stresses were heightened substantially and the speed of the tests were expedited. Real time inspection was performed overall the tests processes and failure analyses were implemented to guarantee the veracities of the tests farthest. The test results were analyzed and the expectations of lifetime were calculated for both two kinds of S-band silicon microwave power transistors.

关 键 词：硅微波功率晶体管 加速寿命试验 阿列尼乌斯模型 可靠性 S波段 

分 类 号：TN323.4[电子电信—物理电子学]