台槽刻蚀对埋栅型静电感应晶体管特性的影响  

Influence of mesa and groove etching on characteristics of static induction transistor with buried gate structure

作　　者：朱筠[1] 

机构地区：[1]西安邮电学院电子工程学院,陕西西安710121

出　　处：《现代电子技术》2012年第8期175-178,共4页Modern Electronics Technique

基　　金：甘肃省自然科学基金(3ZS051-A24-034)

摘　　要：对埋栅型SIT,为切断栅极和源极(或阴极)之间在外延过程中形成的连体,打开栅电极区,进行外延后的台面刻蚀,对台面刻蚀的深度和形状进行研究;为消除栅墙外划片边界造成的各种寄生效应,在有源区的外面挖深槽,以保证栅源击穿发生在内部、实现击穿接近理论值。对先刻蚀台面还是先刻蚀槽的问题做了实验对比,结果发现先台后槽更有利于器件特性的改善。For SIT with buried-gate structure in order to cut off connecting department between grating electrod and source cathode（or cathode） formed in the epilayer process,and open the grating electrode area,the mesa etching after the epitaxy is performed.The depth and shape of mesa etching are studied.To eliminate a variety of parasitic effect,a deep groove is etched outside active region to guarantee the grating source breakdown occurrenced in the internal and achieve the value closed to the theoretical value.In addition,＂etching the gate and then etching the deep groove＂ can produce a good device easier than ＂etching the deep groove and then etching the gate＂.

关 键 词：埋栅型SIT 台面刻蚀 深槽刻蚀 先台后槽 

分 类 号：TN305.7[电子电信—物理电子学]