声表面波器件制作中的一种剥离技术  

A Lift-off Technique for Surface Acoustic Wave(SAW) Device Fabrication

作　　者：杨正兵[1] 冷俊林[1] 曾武[1] 刘晓莉[1] 朱明[1] 陈峻[1] 

机构地区：[1]中国电子科技集团公司第26研究所,重庆400060

出　　处：《压电与声光》2012年第2期163-165,168,共4页Piezoelectrics & Acoustooptics

摘　　要：介绍了一种适用于LiTaO3、LiNbO3基片的金属剥离工艺技术。该剥离技术利用碱性溶剂浸泡处理光刻胶,光刻胶顶层形成一层有利于剥离的突出遮蔽层。利用该技术可制作线宽小于0.5μm的SAW芯片。该技术无需额外设备,工艺稳定且成本低。A metal lift-off process suitable for LiTaO3 and LiNbO3 substrates have been introduced in this paper.It relies on formation of an inhibition layer at the top of the resist film by a simple treatment with an aqueous alkaline solution is introduced.This metal lift-off technique doesn′t need additional equipments,and can provide a good method of fabricating SAW chip with resolution of less than o.5 μm.This proposed technique has the features of good stability and low cost.

关 键 词：声表面波 表面处理 剥离工艺 

分 类 号：TN65[电子电信—电路与系统]