激光二极管触发光导开关实验研究  

Experimental research on GaAs photoconductive semiconductor switches triggered by laser diode

作　　者：吴朝阳[1] 陈志刚[1] 薛长江[1] 陆巍[1] 杨周炳[1] 

机构地区：[1]中国工程物理研究院应用电子学研究所,高功率微波技术重点实验室,四川绵阳621900

出　　处：《强激光与粒子束》2012年第3期635-638,共4页High Power Laser and Particle Beams

基　　金：国家高技术发展计划项目

摘　　要：介绍了利用大功率半导体激光二极管触发3mm间隙GaAs光导开关、产生非线性电脉冲输出的实验,激光二极管输出功率为70W,上升前沿约20ns,脉冲半高宽(FWHM)约40ns。随着开关两端偏置场强增加,输出电压也线性增加,当偏置场强超过一定阈值,增至约2.53kV/mm时,经过一个较小的电压峰值和时间延迟后,输出电压急剧增加,产生雪崩现象。实验结果表明:GaAs开关非线性输出的产生与载流子聚集和碰撞电离有关,偏置电场的提高增加了开关芯片中载流子聚集数量,加剧了碰撞离化程度,从而使开关从线性模式进入雪崩模式。This paper introduces an experiment of 3 mm-gap GaAs photoconductive semiconductor switch（PCSS） triggered by laser diode,which produces nonlinear output on 600 Ω load.The peak power of laser diode is 70 W,and its output rise-time and duration（FWHM） are 20 and 40 ns,respectively.Along with the bias electric field enhancement,the output voltage increases linearly;when the bias electric field exceeds the threshold,about 2.53 kV/mm,the output voltage increases rapidly after a small peak and delay,and the avalanche occurs.Experiment results indicate that the production of nonlinear output has relation to carrier accumulation and impact ionization in GaAs chip;the enhancement of bias electric field increases the number of collective carriers,the degree of impact ionization,and thus accelerate the switch＇s turn into avalanche mode.

关 键 词：光导开关 非线性 激光二极管 载流子聚集 

分 类 号：TM836[电气工程—高电压与绝缘技术]