基区Ge组分分布对SiGe HBT热学特性的影响  

Effects of Ge-Profile on Thermal Characteristics of SiGe HBT

作　　者：赵昕[1] 张万荣 金冬月[1] 谢红云[1] 付强[1] 张东晖[1] 

机构地区：[1]北京工业大学电子信息与控制工程学院,北京100124

出　　处：《微电子学》2012年第2期289-292,296,共5页Microelectronics

基　　金：北京工业大学研究生科技基金(ykj-2011-5108)

摘　　要：建立了SiGe HBT热电反馈模型,对基区Ge组分矩形分布、三角形分布和梯形分布的SiGe HBT的热特性进行研究。结果表明,在Ge总量一定的前提下,Ge组分为三角形和梯形分布结构的SiGe HBT峰值温度较低、温差较小,温度分布的均匀性优于Ge组分矩形分布结构的SiGeHBT,具有更好的热特性。对不同Ge组分分布下器件增益与温度的依赖关系进行研究,发现当基区Ge组分为三角形和梯形分布时,随着温度升高,器件增益始终低于Ge组分矩形分布的器件,且增益变化较小,提高了器件的热学和电学稳定性,扩大了器件的应用范围。An electro-thermal feedback model was established,and effects of different Ge-profiles,such as box,triangular and trapezoidal Ge-profiles,on SiGe HBT thermal characteristics were investigated.Results showed that,for the same Ge amount,SiGe HBT with triangular and trapezoidal Ge-profiles had a lower peak temperature and smaller temperature difference than SiGe HBT with box Ge-profile,which indicated better thermal characteristics.Dependency of current gain β on temperature for different Ge profiles was studied,and it was found that SiGe HBT with triangular and trapezoidal Ge-profiles had a smaller β than SiGe HBT with box-profile and had less change with rising temperature,hence an enhanced thermal and electric stability and extended applications for SiGe HBTs.

关 键 词：SIGE 异质结双极晶体管 热学特性 GE组分分布 

分 类 号：TN322.8[电子电信—物理电子学]