硅基低位错密度厚锗外延层的UHV/CVD法生长  

Epitaxial growth of thick Ge layers with low dislocation density on silicon substrate by UHV/CVD

作　　者：陈城钊[1,2] 郑元宇[1] 黄诗浩[1] 李成[1] 赖虹凯[1] 陈松岩[1] 

机构地区：[1]厦门大学物理系,半导体光子学研究中心,厦门361005 [2]韩山师范学院物理与电子工程系,潮州521041

出　　处：《物理学报》2012年第7期495-499,共5页Acta Physica Sinica

基　　金：国家重点基础研究发展计划(批准号:2007CB613404);国家自然科学基金(批准号:61036003,60837001);中央高校基本业务费(批准号:2010121056)资助的课题~~

摘　　要：利用超高真空化学气相淀积系统,基于低温缓冲层和插入应变超晶格的方法,在Si(100)衬底上外延出厚度约为880nm的纯Ge层.采用X射线双晶衍射、高分辨透射电镜、原子力显微镜和光致发光谱分别表征了其结构及光学性质.测试结果显示外延Ge的X射线双晶衍射曲线半高宽为273″,表面均方根粗糙度为0.24 nm,位错密度约为1.5×10~6cm^2.在室温下观测到外延Ge的直接带跃迁光致发光,发光峰值位于1540 nm.表明生长的Si基Ge材料具有良好的结晶质量,可望在Si基光电子器件中得到应用.Thick Ge epitaxial layers are grown on Si（001） substrates in the ultra-high vacuum chemical vapor deposition system by using the method of low temperature buffer layer combining strained layer superlattices.The microstructure and the optical properties of the Ge layers are characterized by double crystal X-ray diffraction,HRTEM,AFM and photoluminescence spectroscopy.The root-meansquare surface roughness of the Ge epilayer with a thickness of 880nm is about 0.24 nm and the full-width-at-half maximum of the Ge peak of the XRD profile is about 273＂.The etch pit density related to threading dislocations is less than 1.5×10~6 cm^（-2）.The direct band transition photoluminescence is observed at room temperature and the photoluminescence peak is located at 1540 nm.It is indicated that the Ge epitaxial layer is of good quality and will be a promising material for Si-based optoelectronic devices

关 键 词：Ge 外延生长 UHV/CVD 光致发光谱 

分 类 号：TN304.054[电子电信—物理电子学]