亚波长分辨光刻介质特性研究  

Study of characteristics of photolithography medium with sub-wavelength resolution

作　　者：王向贤[1,2] 石洪菲[3] 张斗国[1] 明海[1] 

机构地区：[1]中国科学技术大学光学与光学工程系,安徽合肥230026 [2]巢湖学院电子工程与电气自动化学院,安徽巢湖238000 [3]中国科学院物理研究所,北京100190

出　　处：《功能材料》2012年第9期1177-1180,共4页Journal of Functional Materials

基　　金：国家重点基础研究发展计划(973计划)资助项目(2011CB301802;2012CB922000);国家自然科学基金资助项目(61177053;11004182);安徽省高等学校省级自然科学研究资助项目(KJ2012Z272)

摘　　要：利用365nm波段光源、扫描电镜、台阶仪、原子力显微镜和椭偏仪,研究了亚波长分辨光刻介质X AR-N 7700/30型光刻胶的显影速度、对比度、薄膜厚度和折射率等化学、物理特性参数。光刻胶未曝光部分显影速度为23.15nm/s,曝光部分为1.85nm/s,光刻胶的对比度高达2.5,稀释至30%的质量浓度时,光刻胶可旋涂成45nm厚的薄膜。Using 365nm wave band light sources and SEM, step tester, AFM and ellipsometry, the chemical and physical characteristics, those are developing velocity, contrast, film thickness and refractive index, of photolithography medium X AR-N 7700/30 resist with sub-wavelength resolution are studied. The developing velocity of the unexposed part of the resist is 23.15nm/s, and that is 1.85nm/s for the exposed part. The contrast of the resist is as high as 2.5. The thickness of the spin coating resist film can reach to 45nm, when the resist is dilu- ted to weight concentration 30%.

关 键 词：光刻胶 显影速度 对比度 膜厚 折射率 

分 类 号：O484.4[理学—固体物理] O484.5[理学—物理]