空穴注入控制型LIGBT的研究  

Study of Controlled Hole Injection LIGBT

作　　者：杨健[1] 朱小安[1] 方健[1] 李肇基[1] 

机构地区：[1]电子科技大学微电子所,成都610054

出　　处：《电子学报》2000年第5期119-121,共3页Acta Electronica Sinica

基　　金：国家"九五"军事预研项目资助课题;国防基金项目资助课题

摘　　要：本文提出空穴注入控制型横向绝缘栅双极晶体管 (CI LIGBT) ,可有效控制高压下阳极区空穴注入 ,提高器件的抗闩锁性能 .数值模拟与实验表明 ,通过对阳极区结深、反偏p+ n+ 结击穿电压和取样电阻的优化 。Controlled hole injection LIGBT (CI LIGBT) is proposed in the paper,which can effectively control the hole injection with high anode voltage,and its latch up free characteristics can be improved.Numerical simulation and experiment indicate that its trade off between on state voltage and latch up free characteristics can be realized by the optimization of the anode junction depth,the breakdown voltage of the p +n + junction and the sampling resistance.

关 键 词：功率集成电路 横向绝缘棚 双极晶体管 空穴注入 

分 类 号：TN4[电子电信—微电子学与固体电子学]