980nm应变量子阱激光器外延层工艺参数的优化设计  

Optimal design of epitaxial layer technological parameter of 980 nm strained quantum well lasers

作　　者：张莹[1] 宋爱民[2] 王培界[3] 

机构地区：[1]重庆邮电大学光电工程学院,重庆400065 [2]重庆教育学院图书馆,重庆400067 [3]重庆光电技术研究所,重庆400060

出　　处：《重庆邮电大学学报（自然科学版）》2012年第2期212-216,221,共6页Journal of Chongqing University of Posts and Telecommunications(Natural Science Edition)

摘　　要：对980 nm应变量子阱激光器的外延层工艺参数进行优化设计。通过理论计算和软件模拟相结合的方法,优化了量子阱的结构,研究了波导层、包层中的Al组分对量子阱激光器效率的影响。根据优化结果,采用金属有机化合物化学气相淀积(metal organic chemical vapor deposition,MOCVD)技术外延生长了激光器的材料,并进行测试。测试结果表明,在室温下,当工作电流为1 A时,阈值电流为150 mA,斜率效率为0.48 W/A(采用150μm×500μm,未镀膜器件),输出功率为400 mW。In this paper,optimal design of epitaxial layer technological parameters of 980nm strained quantum well lasers is introduced.Through the theoretical calculations and the software simulation,the structure of quantum well structure is optimized,and the Al composition in the waveguide layer and packet layer on the efficiency of quantum well laser is learned.The laser is grown by metal organic chemical vapor deposition（MOCVD）based on the optimization results.The results of the experiment show that,when the operating current is 1 A,the threshold current is 150 mA,the slope efficiency is 0.48 W/A（150 μm × 500 μm,uncoated devices）,and the output power is 400 mW.

关 键 词：单量子阱 压应变 AL组分 金属有机化合物化学气相淀积(MOCVD) 转换效率 

分 类 号：TN248.4[电子电信—物理电子学]