灯丝温度对热丝CVD法制备p型氢化纳米晶硅薄膜微结构与光电性能的影响  

Effects of Filament Temperature on the Microstructure and Optoelectronic Properties of p-type Hydrogenated Nanocrystalline Silicon Thin Films Prepared by Hot-wire Chemical Vapor Deposition

作　　者：潘园园[1] 沈鸿烈[1] 张磊[1] 吴天如[1] 江丰[1] 

机构地区：[1]南京航空航天大学材料科学与技术学院,南京211100

出　　处：《人工晶体学报》2012年第2期284-289,共6页Journal of Synthetic Crystals

基　　金：国家高技术研究发展计划(863)(2006AA03Z219)资助项目;江苏高校优势学科建设工程资助项目

摘　　要：本文采用热丝化学气相沉积法在不同灯丝温度(1650～1850℃)下沉积了p型氢化纳米晶硅薄膜,研究了灯丝温度对薄膜微结构、光学性能及电学性能的影响。结果表明,随着灯丝温度的升高,薄膜的晶化率先增大后略微减小,最大值是55.5%。载流子浓度和霍尔迁移率先分别从5×1017cm-3和0.27 cm2/V.s增加到1.32×1020cm-3和0.43 cm2/V.s后略微减小,同时电导率从0.02 S/cm显著增加到8.95 S/cm,而电导激活能则从271.5 meV急剧减小至25 meV。In this study,the effects of filament temperature on the microstructure,optical and electrical properties of p-type nc-Si∶H thin films deposited by HWCVD at different temperatures（1650-1850 ℃） were studied.The results indicated that as the filament temperature increasing,the crystalline volume fraction of the film increased first and then decreasd a little with the maximum value of 55.5%.The carrier concentration and hall mobility increased respectively from 5×1017 cm-3 and 0.27 cm2/V· s to 1.32×1020 cm-3 and 0.43 cm2/V· s first and then decreasd a little.The conductivity increased significantly from 0.02 S/cm to 8.95 S/cm while activation energy decreased rapidly from 271.5 meV to 25 meV.

关 键 词：灯丝温度 氢化纳米晶硅 热丝化学气相沉积 微结构 电学性能 

分 类 号：O484[理学—固体物理]