氮偏压对α-GaAs_(1-x)N_x薄膜性能的影响  

Effect of pressure of nitrogen on the properties of α-GaAs_(1-x)N_x films

作　　者：张丽明[1] 王莹[1] 

机构地区：[1]商丘职业技术学院,河南商丘476000

出　　处：《应用化工》2012年第4期588-590,共3页Applied Chemical Industry

基　　金：国家自然科学基金资助项目(60572001)

摘　　要：采用磁控溅射方法在硅片上制备了不同氮偏压下的非晶GaAs1-xNx薄膜,结合拉曼光谱仪和椭偏仪等手段对样品进行了表征。结果表明,掺入氮气后,α-GaAs薄膜的拉曼光谱有明显变化;随着氮偏压的升高,α-GaAs1-xNx薄膜的折射率和消光系数逐渐减小,其峰值向短波长略微移动。另外,α-GaAs1-xNx薄膜在红外和近红外波段内几乎是透明的。Amorphous GaAs1-xNx films were prepared on Si substrate using radio frequency（RF） magnetron sputtering,Raman spectrometer and spectroscopic ellipsometry were employed to characterize the GaAs1-xNx films.It was found that the pressure of nitrogen has large effect on the Raman spectra of GaAs1-xNx films.The refractive index and the extinction coefficient of α-GaAs1-xNx films both were decreased with the increase of nitrogen pressure,and α-GaAs1-xNx films were transparented in red and near infrared wavelength regions.

关 键 词：磁控溅射 GaAs1-xNx薄膜 拉曼光谱仪 椭偏仪 

分 类 号：O484[理学—固体物理]