Si基Ge/SiGeⅠ型量子阱结构的理论设计和实验研究  

Design and experiment of Si-based Ge/SiGe type-Ⅰ quantum well structure

作　　者：陈城钊[1,2] 陈阳华[1] 黄诗浩[1] 李成[1] 赖虹凯[1] 陈松岩[1] 

机构地区：[1]厦门大学物理系半导体光子学研究中心,福建厦门361005 [2]韩山师范学院物理与电子工程系,广东潮州521041

出　　处：《光电子．激光》2012年第5期922-927,共6页Journal of Optoelectronics·Laser

基　　金：国家重大科学研究计划(2012CB933503);国家自然科学基金(61036003;61176092);中央高校基本业务费(2010121056)资助项目

摘　　要：基于能带工程理论,设计了Si基Ge/SiGeⅠ型量子阱结构。采用超高真空化学气相淀积系统,制备出高质量的Si基Ge/SiGe多量子阱系列材料。当样品中Ge量子阱宽从15nm减少到12nm和11nm时,室温下荧光(PL)光谱观测到量子限制效应引起的直接带跃迁发光峰位的蓝移,峰位的实验值与理论值符合得很好;当Ge量子阱宽逐渐减小到9nm和7nm时,测试得到样品的PL谱峰位却与理论预期出现了较大的差值。进一步的实验表明,这主要是由于量子阱厚度小到一定程度时,量子阱的直接带发光受到抑制,其发光主要源于Ge虚拟衬底。Si-based Ge/SiGe type-Ⅰ quantum well is theoretically designed based on the energy band engineering theory.High-quality Ge/ SiGe multiple quantum wells were grown on Si-based germanium virtual substrates by ultra-high vacuum chemical vapor deposition.When the thickness of the Ge quantum well is reduced from 15 nm to 12 nm and 11 nm,the quantum confinement effect in the Ge/SiGe quantum wells can be directly demonstrated by room temperature photoluminescence（PL）,which is in good agreement with the theoretical prediction.But when the thickness of the Ge quantum well is gradually reduced to 9 nm and 7 nm,the experimental result doesn′t obey the theoretical prediction.Further experiments reveal the reason that when the thickness of the Ge quantum well is reduced to some extent,the photoluminescence from the direct band transition of the Ge well will be restrained and it mainly originates from the Ge virtual substrate.

关 键 词：能带工程理论 Ge/SiGe 量子阱 室温荧光(PL)光谱 

分 类 号：O472[理学—半导体物理]