硅基微通道板微孔结构形貌的实验研究  

Experimental Study on the Pore Morphology of Silicon-Based Microchannel Plates

作　　者：吕文峰[1] 周彬[1] 罗建东[1] 雷耀虎[1] 郭金川[1] 牛憨笨[1] 

机构地区：[1]深圳大学光电子器件与系统教育部重点实验室,广东深圳518060

出　　处：《激光与光电子学进展》2012年第5期160-164,共5页Laser & Optoelectronics Progress

基　　金：国家自然科学基金(11074172);深圳市科技研发资金重点实验室提升发展项目(CXB201005240011A);深圳市科技计划基础研究重点项目(JC200903130326A)资助课题

摘　　要：硅基微通道板(MCP)的重要技术挑战之一就是如何在硅基上制作高深宽比的微孔阵列结构。采用光助电化学刻蚀方法研究硅基高深宽比微孔阵列制作技术。考虑到实际反应条件下的物质输送、刻蚀液浓度、光照条件、温度等因素的影响都体现在刻蚀电流与电压上,重点研究了电流、电压与微结构形貌之间的关系。通过空间电荷区的大小以及刻蚀电流与溶液浓度之间的关系,得到合理的刻蚀参数。在5inch(1inch=2.54cm)硅基上制作出深度达200μm以上的均匀深孔,得到大面积、高深宽比的均匀微孔阵列,满足微通道板对结构形貌的要求。One grand challenge of silicon-based microchannel plate （MCP） fabrication is to make the micro-pore array of high aspect ratio on the silicon wafer. Photo-assisted electrochemical etching technique is used to make such micro-pore arrays on n-type silicon suhstrate. Considering that the influences of matter transportation, solution concentration, illumination and temperature are reflected by the etching current and voltage under the actual etching conditions, the research is focused on the effects of the etching voltage and current on the morphology of the micro-pores. According to the structure and morphology of deep etching pores, tile current, voltage and illumination are modified. Finally, the micro-pores of depth over 200 μm are fabricated on a 5 inch （1 inch=2.54 cm） silicon wafer. The large-area uniform pore array of high- aspect ratio is obtained. It meets the structure parameter requirements of MCP post-production.

关 键 词：光学器件 微孔阵列 光助电化学刻蚀 空间电荷区 深宽比 探测器 

分 类 号：O436[机械工程—光学工程]