图形化蓝宝石衬底GaN基LED的研究进展  

Research progress of Patterned Sapphire Substrate for GaN-Based Light-Emitting Diodes

作　　者：周仕忠[1] 林志霆[1] 王海燕[1] 李国强[1] 

机构地区：[1]华南理工大学材料科学与工程学院,广州510640

出　　处：《半导体技术》2012年第6期417-424,共8页Semiconductor Technology

摘　　要：蓝宝石衬底作为发光二极管最常用的衬底,经过不断发展,在克服其与GaN间晶格失配和热膨胀失配问题上,研究人员不断提出解决方案。近期发展起来的图形化衬底技术,除了能减少生长在蓝宝石衬底上GaN之间的差排缺陷,提高磊晶质量以解决失配问题,更能提高LED的出光效率。从衬底图形的形状、尺寸、制备工艺出发,回顾了图形化蓝宝石衬底GaN基LED的研究进展,详细介绍了近年来关于图形化衬底技术与其他技术在提高LED性能方面的结合,总结了图形化蓝宝石衬底应用于大尺寸芯片的优势,并对其未来在大功率照明市场的应用进行了展望。Nowadays, the patterned sapphire substrate technology is used as a fundamental technology to overcome the material stress that the results from a combination of lattice mismatch and thermal expansion coefficient mismatch, and achieves high efficiency light emitting diodes （LED）. This article briefly reviews recent development of patterned sapphire substrate for GaN-based LEDs. It starts with an introduction to the epitaxial growth of GaN on sapphire substrate and a number of new technologies to create LEDs with enhanced performance. The influences of uniformed shaped pattern, nano sized pattern and the pattern fabricating method, i.e. dry- or wet-etching methods on the light extraction efficiency of LEDS are presented. It is demonstrated that a combination of patterned substrate with other technologies is able to improve the performance of LEDs. The future directions in this area, like the possibility of appliance to large-size chips, design and optimization of nano-scale patterns, as well as to combine optical simulations, are mentioned.

关 键 词：蓝宝石 图形化衬底 发光二极管(LED) GAN 制备工艺 

分 类 号：TN304.2[电子电信—物理电子学]