Si基薄膜体声波谐振器(FBAR)技术研究  

Study on Silicon-Based Film Bulk Acoustic Resonator(FBAR) Technology

作　　者：韩东[1] 胡顺欣[1] 冯彬[1] 王胜福[1] 邓建国[1] 许悦[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2012年第6期456-459,469,共5页Semiconductor Technology

摘　　要：介绍了目前国际上主流的薄膜体声波谐振器(FBAR)技术,分析了FBAR谐振器的结构设计和压电薄膜选取方案。依托Si基半导体工艺平台,采用牺牲层技术完成了空气腔的制作,利用磁控反应溅射技术制备的高质量(002)AlN薄膜作为压电材料,基于FBAR多层立体结构,实现了空气腔型FBAR谐振器的制作工艺,实际制作了FBAR谐振器样品。实测FBAR谐振器样品典型指标:Q值≥300,谐振频率为1.46 GHz,谐振频率覆盖L波段。测试结果验证了设计方案及工艺路径的正确性与可行性,为后续产品的研发提供了技术基础。The international mainstream film bulk acoustic resonator （FBAR） technology was introduced. The design of FBAR structure and the piezoelectric film selection scheme were analyzed. Relied on silicon-based semiconductor technology platform, the air cavity was obtained by the methodology of sacrifice layer. The high quality AIN thin film with （002） oriented as a piezoelectric material was achieved by magnetron reactive sputtering. Based on the FBAR three-dimensional multilayer structure, the production process of the air cavity type FBAR resonator was realized, and the actual FBAR samples was made. The typical test results show a Q-Factor larger than 300 and a resonance frequency of 1.46 GHz. It shows that the design scheme and process technology is correct and feasible, and the technology provides technical foundation for the development of the follow-up product.

关 键 词：薄膜体声波谐振器 氮化铝薄膜 空气腔 牺牲层技术 谐振器 

分 类 号：TN75[电子电信—电路与系统]