GaAs器件寿命试验结温测试方法研究  

Junction Temperature Testing in the Life Test of GaAs

作　　者：洪潇[1,2] 芦忠[1,2] 来萍[1,2] 

机构地区：[1]工业和信息化部电子第五研究所,广东广州510610 [2]电子元器件可靠性物理及其应用技术国家级重点实验室,广东广州510610

出　　处：《电子产品可靠性与环境试验》2012年第B05期118-121,共4页Electronic Product Reliability and Environmental Testing

摘　　要：在GaAs器件寿命试验中,器件的性能参数退化与结温密切相关。对于如何确定结温问题进行了研究,介绍了热阻的定义以及目前热阻测试中常用的方法。针对GaAs器件长期使用中出现的参数漂移、输出功率下降等问题,试验设计了4种相关的单机理评价结构,并使用电参数测试法确定出GaAs加速寿命试验中最合适的环境温度。The degradation of device performance parameters is closely related to the junction temperature in the life test of GaAs devices. In this paper, the approaches to determine the junction temperature are investigated. The definition of thermal resistance and its testing methods are described. For the problems of parameter drift and decreased output power occurred during thelong-term use of GaAs devices, four single-mechanism evaluating structures are designed,and the most appropriate ambient temperature in the accelerated life test of GaAs isdetermined through electrical parameter testing.

关 键 词：砷化镓器件 热阻测试 结温 

分 类 号：TN307[电子电信—物理电子学]