电离总剂量辐照试验流程阐述  

Test Process for Total Ionizing Dose

作　　者：王文双[1] 费武雄[1] 

机构地区：[1]工业和信息化部电子第五研究所,广东广州510610

出　　处：《电子产品可靠性与环境试验》2012年第B05期163-166,共4页Electronic Product Reliability and Environmental Testing

摘　　要：空间辐射环境是影响航天电子设备长期稳定运行的重要因素,是当前航天电子技术研究的重点。针对目前国内主要的电离总剂量辐照试验标准,阐述了MOS的辐照试验流程,并对其中包含的机理进行了详细的分析;同时,对试验方法中有关偏置条件、辐照后测试时间的规定等内容进行了详细的分析。The space radiation environment is an important factor that affects the long-term stable operation of avionics, and thus the focus of today＇ s avionic technology study. Based on the main national standards about total ionizing dose irradiation tests, the process of irradiation test of the MOS is discussed, and the mechanisms contained are analyzed in detail. The contents such as the bias conditions and the test time after irradiation are presented in detail.

关 键 词：电离总剂量 金属-氧化物-半导体器件 辐照流程 偏置条件 

分 类 号：TN386[电子电信—物理电子学]