氧气中加工生成硅量子点的受激发光  

Stimulated Emission of Silicon-based Quantum Dot Oxygenated

作　　者：蔡成兰[1] 黄伟其[1] 刘家兴[1] 苏琴[1] 陈汉琼[1] 

机构地区：[1]贵州大学纳米光子物理研究所,光电子技术与应用省重点实验室,贵阳550025

出　　处：《贵州大学学报（自然科学版）》2012年第2期8-12,共5页Journal of Guizhou University:Natural Sciences

基　　金：中国自然科学基金资助课题(批准号:60966002)

摘　　要：用纳秒脉冲激光辐照加工生成硅量子点结构,经过适当退火后,在605 nm和693 nm处检测到受激发光峰并能观察到有明显的光增益现象和阈值行为。通过在硅量子点表面建立Si-O-Si桥键和Si=O双键键,用第一性原理对氧气中用激光加工的硅基量子点的电子态密度进行模拟计算,结果表明两种键在量子点中都形成局域态,但局域态位置不同。结合理论和实验,得出产生受激发光峰增强效应和阈值行为的主要原因,并提出硅量子点纳米激光这一新思想,量子受限效应决定激光的抽运能级,局域态在导带和价带之间为粒子数反转提供必要条件。Silicon-based Quantum Dot Structures was prepared by Nanosecond Laser Pulses after the crystallization at the optimal annealing condition,the peaks of stimulated emission were observed at 605nm and 693nm which have optical gain and threshold behavior obviously.By building Si-O-Si and Si=O bond on the surface of Quantum Dot,using the first principles method,the density of state of Silicon-based Quantum Dot in oxygen was simulation calculated.The results indicate that the two type bonds in Quantum Dot were forming Localized States in different positions.Integrate theory with practice,the main reasons were elaborated for the optical gain and threshold behavior and proposes a new conception of nano-laser,and the pumping level of laser determined by the quantum confinement（QC） effect and the localized states are necessary condition for population inversion formed between the valence band and conduction band.

关 键 词：硅量子点 受激发光 量子受限 局域态 

分 类 号：O472.3[理学—半导体物理]