不同S值磁控阴极溅射沉积Mo薄膜的结构与性能研究  

Structure and Properties of Mo Thin Films Prepared by Magnetron Sputtering under Different S Value

作　　者：赵志明[1] 张晓静[1] 马二云[1] 曹智睿[1] 白力静[1] 蒋百灵[1] 

机构地区：[1]西安理工大学材料学院,陕西西安710048

出　　处：《稀有金属》2012年第3期410-414,共5页Chinese Journal of Rare Metals

基　　金：陕西省自然科学基金资助项目(2010JQ6008);陕西省科学研究计划(21080209JK608);陕西省重点学科建设专项资金资助项目;西安理工大学现代分析测试中心提供的资助;西安金唐材料应用科技有限公司提供的资助

摘　　要：在室温下,利用不同磁感应强度相对分布因子S的磁控阴极溅射沉积了金属Mo薄膜。实验研究了磁控阴极S值对放电参数、Mo薄膜的结构、形貌及性能的影响。分别利用XRD,SEM和四探针技术对Mo薄膜的相结构、表面和截面形貌及电阻率进行表征分析。结果表明,随着磁控阴极S值的增加,Mo靶放电电压降低,而放电电流增加;不同S值的磁控阴极沉积的Mo薄膜均呈现多晶结构,且具有柱状生长特征;随着磁控阴极S因子的增加Mo膜的厚度和电导率呈现先增加而后减小的变化规律,电阻率最小可达4.9×10-6Ω·cm。Mo thin films were deposited by dc magnetron sputtering technique with different S factor onto silicon and Corning 7101 glass substrates at room temperature.The influence of S factor on the structure,morphology and resistivity of the Mo thin films was studied.The structural and electric properties and morphology of Mo thin films were analyzed by XRD,SEM and four point probing method,respectively.As-grown Mo thin films had polycrystalline and showed columnar morphology.With increasing S factor,target voltage was decreased and thickness and conductivity of Mo films firstly increased,and then decreased.Mo thin films were fabricated with both low resistivity（（4.9~11.8）×10-6 Ω · cm） and good adhesion.

关 键 词：磁感应强度分布因子 MO薄膜 磁控溅射 电阻率 

分 类 号：O484.1[理学—固体物理]