氮氩流量比对磁控溅射TiN薄膜生长织构的影响  

Effect of N_2/Ar Flow Ratio on Orientation of TiN Thin Films

作　　者：田颖萍[1] 范洪远[1] 成靖文[1] 

机构地区：[1]四川大学制造科学与工程学院,成都610065

出　　处：《表面技术》2012年第3期19-21,25,共4页Surface Technology

基　　金：国家自然科学基金项目(50874076);科技人员服务企业行动项目(2009GJF0003)

摘　　要：采用直流反应磁控溅射法,通过控制氮氩流量比,在Si(111)衬底上沉积了TiN薄膜,并用织构系数来量化TiN薄膜的生长取向。对TiN薄膜的织构、物相组成、形貌进行表征,分析了溅射沉积过程中氮氩流量比对TiN薄膜生长织构的影响,同时还分析了不同织构薄膜的表面及截面形貌。结果表明:氮氩流量比低于1∶30时,薄膜的织构由(200)转变为(111),同时还出现了TiN0.61相;(111)织构的薄膜表面均匀,致密性好,粗糙度小,以氮氩流量比为1∶60时所得织构系数为1.63的(111)薄膜最好。TiN thin films were deposited on Si （111） substrates under different N2/Ar flow ratio by DC reactive magnetron sputtering method, in order to quantify the growth orientation of TiN film. The orientation, phase structures, morphology of TiN thin films were characterized. The effect of N2/Ar air pressure on orientation of TiN thin films was investigated, and the relations between TC and thin films morphology were analyzed. The results show that when the N2/Ar air pressure is less than 1 ： 30, the phase structure evolves from the orientation （200） to （111）. （111） structural surface of thin film uniformity, denser and roughness smaller, film substrates combined with better, and the best one is the 1.63 orientation film when the N2/Ar flow ratio is 1 ： 60.

关 键 词：氮氩气压比 氮化钛薄膜 织构 磁控溅射 

分 类 号：TG174.444[金属学及工艺—金属表面处理]