机械致单轴应变SOI晶圆的制备  

Fabrication of the uniaxial stained SOI wafer by mechanical bending

作　　者：戴显英[1] 王琳[1] 杨程[1] 郑若川[1] 张鹤鸣[1] 郝跃[1] 

机构地区：[1]西安电子科技大学宽禁带半导体材料与器件教育部重点实验室,陕西西安710071

出　　处：《西安电子科技大学学报》2012年第3期209-212,共4页Journal of Xidian University

基　　金：国家重点基础研究发展计划(973)资助项目(6139801-1)

摘　　要：提出了一种晶圆级单轴应变绝缘层上硅(SOI)的新方法,并阐述了其工艺原理.将直径为100mm(4英寸)的SOI晶圆片在曲率半径为0.75m的弧形弯曲台上进行机械弯曲,弯曲状态下的SOI晶圆片在250℃下进行了20h的热退火处理.对弯曲退火后SOI晶圆片进行了拉曼光谱表征,其拉曼频移为520.3cm-1,小于体硅的典型值,拉曼频移差达到-0.3cm-1,说明弯曲退火后的SOI晶圆片发生了单轴张应变.相应的应变量计算为0.077%,高于文献报道的0.059%.Based on the theory of elasticity and the mechanical properties of SOI, this paper puts forward a new method to produce the uniaxially strained SOI wafer, and describes the principle of the process. The 4- in. Silicon-On-Insulater wafer under goes the mechanical-bended test on the pedestal whose curvature radius is 0.75m, and then it is annealed at 250℃ for 20 hours to achieve the uniaxial strain. The IR-transmission- unaffected-diffraction instrument and Raman spectrum instrument are used for study of the pre-bonding quality and strain degree. The frequency shift of the Raman spectrum is 520.3 cm^-1 . The Si peak of the strained Si layer is shifted by --0.3 cm^-1 compared to the typical value. It is indicated that a compressive uniaxial strain can be obtained after bending and annealing. The comparative strain is 0. 077 %, higher than the value of 0. 059% in the literature.

关 键 词：绝缘层上硅 单轴应变 机械弯曲 弹塑性力学 

分 类 号：TN304[电子电信—物理电子学]