OB LDMOS器件的性能研究  

The Performance Study of Oxide By-passed Lateral Double Diffused MOSFET(OB LDMOS)

作　　者：唐盼盼[1] 王颖[1] 

机构地区：[1]哈尔滨工程大学信息与通信工程学院,黑龙江省哈尔滨150001

出　　处：《功能材料与器件学报》2012年第2期178-182,共5页Journal of Functional Materials and Devices

基　　金：国家自然科学基金(No.60906038);中央高校基本科研业务费专项资金资助(No.GK2080260104)

摘　　要：研究了一种具有OB(Oxide By-passed)结构的SOI LDMOS器件,分析了该器件的耐压机理以及结构特点,并通过SILVACO TCAD软件对该结构进行三维数值仿真。通过仿真验证可知,该结构通过类超结(SJ)电场调制技术获得了与超结器件类似的性能,该结构与SJ LDMOS在相同的尺寸情况下尽管耐压相同,但导通电阻从3.81mΩ.cm2降低到1.96mΩ.cm2,同时克服了SJ LD-MOS器件制造工艺上高深宽比以及电荷浓度难易精确匹配的缺陷。An SOI LDMOS device structure with Oxide By-passed（OB） was investigated and its breakdown mechanism and characteristic of structure was analyzed.Its performance was verified by three dimensional numeric simulation with SILVACO TCAD software.The simulated results show that the electrical field element of the device is modulated by the technology of similar Superjunction（SJ） structure.Compared with the SJ LDMOS device,OB LDMOS achieved not only the same breakdown voltage,but also the specific on-resistance of the OB LDMOS reducing from 3.81mΩ·cm2 to 1.96mΩ·cm2,except for achieving comparable performance and overcoming the high aspect ratio of fabrication structure and difficulty of accurate concentration match of SJ LDMOS.

关 键 词：SOI结构 OB结构 导通电阻 电荷补偿 

分 类 号：TN386.1[电子电信—物理电子学]