带有n+深阱的三阱CMoS工艺中寄生NPN双极效应及其对电荷共享的影响  

NPN bipolar effect and its influence on charge sharing in a tripe well CMOS technology with n^+ deep well

作　　者：刘必慰[1] 陈建军[1] 陈书明[1] 池雅庆[1] 

机构地区：[1]国防科技大学计算机院微电子与微处理器研究所,长沙410073

出　　处：《物理学报》2012年第9期360-366,共7页Acta Physica Sinica

基　　金：国家自然科学基金重点项目(批准号:60836004);国家自然科学基金(批准号:61006070;60906014);教育部博士点基金(批准号:20104307120006)资助的课题~~

摘　　要：基于三维TCAD器件模拟,研究了带有n^+深阱的90 nm三阱CMOS器件在重离子辐照下产生的电荷共享效应.研究结果表明在重离子辐照时,n^+深阱会导致寄生的NPN双极型晶体管触发,显著增强NMOS间的电荷共享,其放大因子达到双阱工艺中寄生PNP晶体管放大因子的2—4倍.进而分别研究了n阱接触和P阱接触对寄生NPN双极放大的影响,结果表明增大P阱接触的面积和减小n阱接触的距离将抑制NPN晶体管的放大作用,而增大n阱接触的面积将增强NPN的放大作用.In this paper, we investigate the charge sharing collection induced by heavy ion radiation in a tripe well CMOS technology with n^＋ deep well though 3-D TCAD device simulation. Result shows that n^＋ deep well will induce the parasitical NPN bipolar transistor, and therefore enhance the charge sharing between NMOS remarkably. The enhancement factor is 2-4 times that in PNP bipolar in dual well technology. Furthermore, the effects of n-well contact and p-well contact on NPN bipolar are studied. The result shows that the NPN bipolar enhancement factor will decrease with the increase of p-well contact area and with the decreasing of its distance to device, while the NPN bipolar enhancement factor will increase with the increase of n-well contact area.

关 键 词：电荷共享 单粒子效应 n^+深阱 寄生双极型晶体管 

分 类 号：TN386.1[电子电信—物理电子学]