Al/CuPc/Cu肖特基气敏二极管制备与特性  

Gas-sensitive Characteristics Research of Al/CuPc/Cu Schottky Diode

作　　者：王东兴[1] 刘晓廉[1] 焦兵兵[1] 刘跃[1] 

机构地区：[1]哈尔滨理工大学应用科学学院,黑龙江哈尔滨150080

出　　处：《哈尔滨理工大学学报》2012年第2期127-130,共4页Journal of Harbin University of Science and Technology

基　　金：黑龙江省教育厅科学技术研究项目(12511120)

摘　　要：实验采用溅射和蒸发镀膜工艺,制备了一种新型的Al/CuPc/Cu三明治结构NO2气敏传感器.这种器件对NO2气体具有较高的敏感性,制备工艺简单,成本较低.通过研究其在NO2气体中电学特性的变化,来表征其敏感特性.研究结果表明,在10 ppm的NO2气体环境中,器件的正向电流明显增大.通过比较器件在空气和NO2气体中器件的肖特基势垒高度的变化,发现通入NO2气体50分钟后,CuPc/Al势垒高度降低了60 meV,正向整流电流增加77倍.In this experiment, a novel NO2 gas sensor, Al/CuPc/Cu sandwich structure, was prepared by sputtering and evaporation coating techniques. This device has high sensitivity of NO2 gas, simple process and lower cost. Sensitive characteristics of the device is represented through its changes of electrical properties in the NO2 gas. The results show that the positive current of the device significantly increased in the 10 ppm NO2 gas environ- ment. The change of Schottky barrier height is compared when the device was respectively in air and NO2 gas environment. Then conclusion was drawn that CuPc/Al barrier height of the gas sensor was reduced by 60 meV, and the positive current was enlarged about 77 times after 50 minutes placed in the NO2 gas environment.

关 键 词：肖特基 酞菁铜 敏感度 势垒高度 

分 类 号：TM321.5[电气工程—电机]