一种利用二管EEPROM单元实现四值存储的方法  

A Four-State EEPROM Using Two Transistor Cells

作　　者：张征[1] 程君侠[1] 李蔚[1] 

机构地区：[1]复旦大学集成电路与系统国家重点实验室,上海200433

出　　处：《微电子学》2000年第2期97-99,共3页Microelectronics

摘　　要：提出了一种利用常见的二管 (包括选通管 ) EEPROM实现四值存储的方法。相对于用四管单元实现四值存储 [1] ,该方法节省了芯片面积 ,使 EEPROM芯片的存储量增加一倍。由于只是在读写控制电路上加以改进 ,故适用于几乎所有通常的二管结构的 EEPROM单元 ,且对单元性能影响较小。An approach to storing four state in conventional two transistor EEPROM cells is proposed. Compared with the existing two state storage and four state storage in four transistor cells, it obviously increases the memory density, saving almost 50% of memory area. Since modifications are made only on the peripheral control circuits of the EEPROM’s programming and reading modules, this approach can be applied to almost all popular two transistor EEPROM cells, with minimal effects on the performance of the EEPROM cell.

关 键 词：EEPROM 四值存储 二管单元 

分 类 号：TP333.5[自动化与计算机技术—计算机系统结构]