一种高可靠大容量星载存储器的设计与研究  

Research and Design on High Reliability Mass Capacity Memory Based on NAND Flash

作　　者：朱晓燕[1] 邱庆林[1] 荣金叶[1] 张伟功[1] 

机构地区：[1]首都师范大学北京市高可靠嵌入式系统工程技术研究中心,北京100048

出　　处：《微电子学与计算机》2012年第6期61-63,67,共4页Microelectronics & Computer

基　　金：国家自然科学基金项目(6117009)

摘　　要：凭借着存储密度大和存储速率高的特点,基于NANDFlash的大容量存储器在星载存储领域得到了广泛的应用,由于NAND Flash本身存在缺陷,基于NAND Flash的大容量存储器在恶劣环境下的可靠性难以保证.提出了通过FPGA设计SRAM对关键数据三模冗余读取和缓冲、NAND Flash阵列热备份和数据的回放校验以及合理的坏块管理等措施,实现了高可靠性的大容量存储器.实验说明该系统不会因为外在偶然因素而造成数据的不完整,而且整个存储系统的成本开销相对于目前的星载存储器也非常低.The mass capacity memory based on NAND Flash is widely used in space storage fields recently. However, due to a variety of condition constrain and bad blocks can be produced, so the reliability of mass capacity storage can not be assured especially in severe environment. A new design plan is proposed to realize the high reliability mass capacity memory. The core technology are reasonable bad block management, triplication redundancy reading and writing of key data through SRAM, warm standby of Flash arrays and checking of data playback. The experirrlent result shows that the system data will not be caused to incomplete, and the cost of the whole storage system is lower than the current onboard memory.

关 键 词：NAND FLASH 高可靠 大容量 存储器 

分 类 号：TP202[自动化与计算机技术—检测技术与自动化装置]