PECVD反应室的气流场模拟分析  

Numerical simulation of the flow field in PECVD reaction chamber

作　　者：李桂琴[1] 陆利新[1] 王成刚[1] 

机构地区：[1]上海大学上海市机械自动化与机器人重点实验室,上海200072

出　　处：《真空》2012年第3期42-46,共5页Vacuum

基　　金：上海市重点学科建设项目(Y0102)

摘　　要：本文利用计算流体力学(CFD)方法对某等离子增强化学气相沉积(Plasma Enhanced Chemical Vapor Deposition,PECVD)反应室流场进行了数值模拟研究,通过改变匀流板布孔方式、进气管与匀流板距离、进气管出口形状和角度、压强等条件,研究反应器内流动的相应变化,给出了获得薄膜生长所需的最佳输运过程的条件,以形成稳定均匀的流场,从而保证薄膜的生长质量。根据本文优化后的匀流装置已实际加工应用,取得良好效果。The flow field in plasma enhanced chemical vapor deposition （PECVD） reaction chamber was simulated by computational fluid dynamics（CFD） method. By varying the way pore distributed through gas distributor, distance between outlet and gas distributor panel, form and angle of outlet, and gas pressure, the corresponding gas velocity, flow filed in the reaction chamber was calculated. The geometric structure and inflow pattern of a PECVD reactor was improved in order to provide steady and uniform flow field and thus improve the quality of thin films. The gas distributor is manufactured and improve the gas distribution in the actual equipment.

关 键 词：CFD 均匀布气 数值模拟 PECVD 

分 类 号：TG174.444[金属学及工艺—金属表面处理]