ZnSe单晶薄膜生长控制和掺杂控制  

MBE and Dopping Control of ZnSe Single Crystal Films

作　　者：王善忠 谢绳武 庞乾骏 郑杭 夏宇兴 姬荣斌[2] 巫艳[2] 杨建荣[2] 乔怡敏[2] 于梅芳[2] 杜美容 郭世平[2] 何力[2] 

机构地区：[1]上海交通大学应用物理系 [2]中国科学院上海技术物理研究所

出　　处：《量子电子学报》2000年第2期139-144,共6页Chinese Journal of Quantum Electronics

摘　　要：为研制ＺｎＳｅ基蓝绿色半导体激光器，必须能够对组成激光器的各单元材料实现精确控制生长，包括材料的晶体质量、掺杂浓度和生长速度等．ＺｎＳｅ是制备蓝绿激光器的基础材料，本文报道利用 ＭＢＥ技术对 ＺｎＳｅ材料进行生长控制和掺杂控制的初步研究结果．It is compulsory to realize the accurate control of the growth process of each material layer before a ZnSe-based laser diode could be fabricated, such as crystal quality control, doping level control and growth rate control. ZnSe is the fundamental material for blue/green laser diodes. Reported here are the primary results of an attempt on the crystal quality control, the doping level control and the growth rate control of ZnSe by MBE technology.

关 键 词：蓝绿色半导体激光器 ZNSE 生长控制 单晶薄膜 

分 类 号：TN248.104[电子电信—物理电子学] TN304.055