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作 者:陈红兵[1] 朱宝[1] 陈笋[1] 孙清清[1] 丁士进[1] 张卫[1]
机构地区:[1]专用集成电路与系统国家重点实验室复旦大学微电子研究院,上海200433
出 处:《材料研究学报》2012年第3期255-260,共6页Chinese Journal of Materials Research
基 金:国家自然科学基金61076076;02;国家科技重大专项2009ZX02302-002;新世纪优秀人才支持计划NCET-08-0127资助项目~~
摘 要:以(MeCp)Pt(CH3)3和O_2为反应源,采用原子层淀积(ALD)技术在A1_2O_3衬底上制备Pt纳米颗粒,研究了在氮气中快速热退火对Pt纳米颗粒的特性的影响。结果表明,随着退火温度从700℃升高到900℃,Pt纳米颗粒尺寸逐渐增大,颗粒之间分离愈加清晰,形貌趋向球形,但颗粒密度稍有降低。随着在800℃退火时间从15 s增加到60 s,Pt纳米颗粒的尺寸逐渐增大,尺寸分布变得更加弥散,颗粒的密度逐渐降低;其中退火15 s后的Pt纳米颗粒密度高(9.29×10★cm-2)、分布均匀、分离清晰。900℃退火后在Pt纳米颗粒中出现部分氧化态的Pt原子,其原因可能是在高温下Pt纳米颗粒与A1_2O_3薄膜之间发生了界面化学反应。Pt nanoparticles were prepared on AI203 films by atomic layer deposition using (MeCp)Pt(CH3)3 and 02 as precursors, and the effect of rapid thermal annealing (RTA) on the char- acteristics of Pt nanoparticles was investigated. The results show that as the annealing temperature rises from 700 to 900 ℃, Pt nanoparticles exhibit the increase of the dimensions and self-separation, a tendency to spherical growth, and a slight decrease in particle density. With increasing the annealing time from 15 s to 60 s at 800 ℃, Pt nanoparticles grow big gradually together with increscent dimension dispersion and a decreasing density. Therefore, it is concluded that the annealing at 800℃ for 15 s can achieve high density (9.29×1011cm^-2), uniform and well-separated Pt nanoparticles. Moreover, when the annealing temperature is increased to 900 ℃, some Pt atoms are oxidized, which is likely due to the interracial reaction between Pt and AI2O3
分 类 号:TG115[金属学及工艺—物理冶金]
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