基于表面势的MOSFET模型  

MOSFET Model Based on Surface Potential

作　　者：程彬杰[1] 邵志标[1] 唐天同[1] 

机构地区：[1]西安交通大学微电子工程系,710049

出　　处：《固体电子学研究与进展》2000年第1期66-73,共8页Research & Progress of SSE

摘　　要：基于表面势的模型由于其本质上的优点 ,在小尺寸器件建模中日趋得到重视。文中通过对几种典型的表面势模型的分析 ,论述了基于表面势模型的建模思想、特点和在电路模拟中的优越性。分析表明 ,这是一种基于物理描述的模型 ,具有连续性、物理意义明确、结构简明等特点 ,对建立小尺寸器件整体模型非常适合和有效。Surface potential based MOSFET model with inherent advantages, has attracted more and more attention in modeling of short channel devices. Some typical surface potential based models were studied, the principle of those models were discussed, and the characteristics and advantages of them were analyzed. It is concluded that surface potential based models are physically depictive models and have inherent continuity and effective in formulating compact models of short channel devices.

关 键 词：整体模型 表面势 场效应晶体管 

分 类 号：TN386.1[电子电信—物理电子学]