ZnSe:Cl,N单晶薄膜中载流子浓度的电学法测量和光学法确认  

Examination and Confirmation of the Carrier Concentration in ZnSe:Cl,N Crystal Films by Electrical and Optical Methods

作　　者：王善忠[1] 谢绳武[1] 庞乾骏[1] 郑杭[1] 夏宇兴[1] 姬荣斌[2] 巫艳[2] 李标[2] 杨建荣[2] 何力[2] 

机构地区：[1]上海交通大学应用物理系,光电材料与光电器件实验室,上海200030 [2]中国科学院上海技术物理研究所,半导体薄膜材料研究中心,上海200083

出　　处：《量子电子学报》2000年第1期85-89,共5页Chinese Journal of Quantum Electronics

基　　金：国家杰出青年基金;上海市应用物理中心资助

摘　　要：为了证实某一研究结果的正确性，常常需要采用两种以上相互独立的方法对同一物理量进行测量或计算．本文采用新颖的远红外光谱技术和常用的Ｈａｌｌ、Ｃ－Ｖ等电学测量技术同时对ＭＢＥ生长的ＺｎＳｅ：Ｃｌ，Ｎ薄膜中的载流于浓度进行评价研究，发现电学法和光学法测量的结果可以很好地吻合，从而确认了ＺｎＳｅ宽禁带蓝绿色发光材料中较高的掺杂水平．To verify the correctness of a research result, more than two kinds of independent method are often needed to examine or calculate the same physics quantity. The carrier concentration in both n-type ZnSe:Cl and p-type ZnSe:N crystal films is evaluated with Hall and C-V teChnique, as well as far infrared spectrum technique. It is found that the experiment data obtained with these two kinds of way coincide well with eaCh other. Therefore, we can confirm the ZnSe, a widegap semiconductor material for blue/green light emitting devices, of high doping level.

关 键 词：单晶薄膜 载流子浓度 电学法测量 光学法测量 

分 类 号：O484[理学—固体物理]