磁控溅射Zr掺杂ITO薄膜在3种模拟腐蚀环境中的电学稳定性和耐腐蚀性  

Electrical Stability and Corrosion Resistance of Magnetron Sputtered Zirconium-Doped Indium Tin Oxide Film in Simulated Corrosive Environments

作　　者：朱葛俊[1] 张波[1] 徐良[2] 

机构地区：[1]常州机电职业技术学院,江苏常州213164 [2]上海交通大学材料学院,上海200240

出　　处：《材料保护》2012年第6期32-34,38,共4页Materials Protection

基　　金：常州市应用基础研究计划项目(CJ20110004)

摘　　要：过去,鲜有Zr掺杂氧化铟锡(ITO)薄膜电学稳定性及耐蚀性的研究报道。采用磁控溅射法制备了ITO薄膜和Zr掺杂ITO薄膜(ITO∶Zr),研究了2种薄膜的微观结构、光电性能及其在3种模拟腐蚀环境(酸性、海洋、工业)腐蚀液中的电学稳定性及耐腐蚀性。结果表明:Zr的掺杂导致了ITO薄膜择优取向向(400)晶面转变,ITO∶Zr薄膜比ITO薄膜具有更好的光电性能;2种薄膜在3种环境介质中都能发生自钝化,在工业环境中具有最好的耐腐蚀性能;ITO∶Zr薄膜比ITO薄膜具有更好的电学稳定性和耐腐蚀性。Indium tin oxide(ITO) film and ITO film doped with Zr(ITO∶Zr film) were prepared by magnetron sputtering.The microstructure and optical-electrical properties of the two kinds of films as well as their electrical stability and corrosion resistance in three kinds of simulated corrosive environments(acidic environment,oceanic environment and industrial environment) were investigated.It was found that Zr doping caused preferred orientation transformation of ITO film towards(400) plane,and ITO∶Zr film possessed better optical-electrical properties than ITO film.Both ITO and ITO∶Zr films were able to be self-passivated in different corrosive environments,and they showed the best corrosion resistance in simulated industrial corrosive environment.Besides,ITO∶Zr film possessed better electrical stability and corrosion resistance than ITO film.

关 键 词：磁控溅射 ITO薄膜 Zr掺杂 电学稳定性 耐腐蚀性 腐蚀环境 

分 类 号：O484.4[理学—固体物理] TG174.444[理学—物理]