Si_(1-X)Ge_X/Si红外光电探测器  

Si_(1-X)Ge_X/Si Infrared Photodetectors

作　　者：江若琏[1] 罗志云[1] 陈卫民[1] 臧岚[1] 朱顺明[1] 刘夏冰[1] 程雪梅[1] 陈志忠[1] 韩平[1] 王荣华[1] 郑有斗[1] 

机构地区：[1]南京大学物理系,南京210093

出　　处：《光电子．激光》2000年第1期17-19,共3页Journal of Optoelectronics·Laser

基　　金：国家"八六三"计划资助项目!( 863 -3 0 7-96-0 5 ( 0 5 ) );国家自然科学基金资助项目 !( 6963 60 10 )

摘　　要：本文报导了用两种缓冲层生长技术研制的 Si1- XGe X/ Si异质结 pin型红外探测器。其波长范围为0 .70～ 1.5 5 μm,峰值波长为 0 .96～ 1.0 6 μm,暗电流密度低达 0 .0 3μA/ mm2 ( - 2 V) ,在 1.30 μm处的响应度高达 0 .15 A/ W( - 5 V) ;讨论了 Ge组分、外延层厚度。WT5”BZ]:Si 1-X Ge X/Si heterojunction pin photodetectors were fabricated.The buffer layers of SiGe alloys were grown by two techniques.The wavelength range of these detectors is 0.70～1.55 μm with peak at 0.96～1.06 μm,the dark current density is as low as 0.03 μA/mm 2 (-2V),the responsivity at 1.30 μm is as high as 0.15 A/W (-5V).The influence of Ge fraction,epilayer thickness and bias voltage on the parameters of SiGe/Si detectors is also discussed.

关 键 词：光电探测器 锗化硅合金 红外探测器 

分 类 号：TN215[电子电信—物理电子学]