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作 者:许俊华[1] 顾明元[1] 李戈扬[1] 金燕苹[1]
机构地区:[1]上海交通大学金属基复合材料国家重点实验室,上海200030
出 处:《上海交通大学学报》2000年第3期347-350,共4页Journal of Shanghai Jiaotong University
摘 要:采用磁控反应溅射工艺制备了Si3N4/TiN陶瓷纳米多层膜,运用X射线衍射、透射电镜和显微硬度仪等对纳米多层膜的微结构、应力状态和硬度进行测试.研究结果表明,Si3N4/TiN多层膜中,Si3N4层为非晶态,TiN层为晶态.Si3N4/TiN多层膜的显微硬度既受调制周期Λ的影响,同时又与调制比有关.当调制比lSi3N4/lTiN=3和调制周期Λ=12.0nm左右时,多层膜的显微硬度达到最大值,其数值比用混合法则计算的值高40%以上.根据实验结果。The polycrystalline Si 3N 4/TiN ceramic nano multilayer films were synthesized by a reactive magnetron sputtering technique. The microstructure, microhardness and internal stress state of the nano multilayer films were investigated using transmission electron microscope (TEM), microhardness tester and X ray diffraction (XRD). The results show that the Si 3N 4 layers are amorphous structure and the TiN layers are crystal in the Si 3N 4/TiN nano multilayer films. The hardness of Si 3N 4/TiN nano multilayers is affected not only by modulation period, but also by modulation ratio. The hardness reaches its maximum value when modulation period equals a critical value Λ 0, which is about 12 nm with a modulation ratio of 3/1 . The maximum hardness value is about 40% higher than the value calculated from the rule of mixtures. Based on the experimental results, the mechanism of the superhardness in this system was proposed.
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